Semiconductor nanocrystals, or quantum dots (QDs), have garnered enormous attentions in large panel displays (e.g. Samsung QLED TVs). In this application, a sharp emission spectrum is critical because it reflects monochromaticity. However, the experimental study of single-dot emission spectrum is challenging because of the small size of QD. In this work, we develop theoretical framework to calculate the emission spectra of QDs. To the best of our knowledge, this is the first attempt to evaluate the emission linewidths of QDs using ab initio methods. The role of shape, size and surface defects are studied within this framework. We find that the calculated spectral linewidth is consistent with the result of the latest single-particle measurement for CdSe/CdxZn1−xSe core/shell QD. This work enables ones to predict the emission linewidth of QDs, which paves the way for designing QDs with an ultrasharp spectrum. This work was published at ACS Applied Materials & Interfaces 2020, 12, 22012.
Despite the great potential of a-CuI:Sn as a new class of transparent p-type semiconductors, the fundamental understanding is still incomplete. To reveal the microscopic origin, structural and electrical properties of a-CuI are investigated. Despite the amorphous structure, states at valence band maximum are extended in linear ways due to the hybridization between I-5p state, explaining the high hole mobilities in the experiment. This work will help design new wide-band-gap p-type semiconductors. This work was published at Physica Status Solidi B, 2020, 2000218.
This work proposes a highly efficient and atomic-resolution prediction uncertainty indicator for neural network potential (NNP) using a “replica” ensemble. Compared to previous approaches using model ensembles, the present method excels in the training speed and spatial resolution. This method is applied to simulating silicidation processes of Ni contacts in semiconductor devices, which is a highly complicated process and requires close monitoring of prediction uncertainty to judge the soundness of simulations. By analyzing the problematic structures, NNP can be improved with a repairing data set, thereby obtaining a reliable simulation up to several nanoseconds. This work was published at The Journal of Physical Chemistry Letters, accepted.
Among various emerging memories, phase change memory has attracted wide interests to compete against conventional memories. In spite of recent commercialization of 3D XPoint by Intel and Micron, slow writing speed (crystallization) is still problematic. Molecular dynamics simulation helps to understand crystallization kinetics in atomic scale. First-principles molecular dynamics gives good insight, but it is difficult to quantitatively compare with experiments due to finite cell. Recently, nueral network potential (NNP) fitted to DFT data enables accurate large-scale crystallization simulation. In this study, we develop reliable NNP for GeTe and simulate crystallization process considering device condition. Nucleation-limited crystallizations are well reproduced,leading to incubation periods of 7 or 17 ns at 500 K. This is in good agreements with the minimum incubation time of 30 ns in experiments. This work was published at Computational Materials Science 2020, 181, 109725.